050-5893 rev a 2-2005 maximum ratings all ratings: t c = 25c unless otherwise specified. g d s APT40M70JVFR 400v 53a 0.070 ?? ?? ? sot-227 g s s d isotop ? "ul recognized" caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 10v, 26.5a) zero gate voltage drain current (v ds = 400v, v gs = 0v) zero gate voltage drain current (v ds = 320v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 2.5ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms ana volts min typ max 400 0.07 250 1000 100 24 APT40M70JVFR 400 53 212 3040 450 3.6 -55 to 150 300 5350 2500 power mos v ? fredfet power mos v ? is a new generation of high voltage n-channel enhancement mode power mosfets. this new technology minimizes the jfet effect,increases packing density and reduces the on-resistance. power mos v ? also achieves faster switching speeds through optimized gate layout. faster switching avalanche energy rated lower leakage popular sot-227 package fast recovery body diode downloaded from: http:///
dynamic characteristics APT40M70JVFR 050-5893 rev a 2-2005 z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.30.1 0.050.01 0.0050.001 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.1 single pulse 0.02 0.05 0.2 d=0.5 0.01 source-drain diode ratings and characteristics characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -i d [cont.]) peak diode recovery dv / dt 5 reverse recovery time(i s = -i d [cont.], di / dt = 100a/s) reverse recovery charge(i s = -i d [cont.], di / dt = 100a/s) peak recovery current(i s = -i d [cont.], di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller") charge turn-on delay time rise time turn-off delay time fall time test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 0.5 v dss i d = i d [cont.] @ 25c v gs = 15v v dd = 0.5 v dss i d = i d [cont.] @ 25c r g = 0.6 ? min typ max 7410 8890 1140 1600 450 675 330 495 40 60 127 190 16 32 16 32 54 80 51 0 unit pf nc ns min typ max 53 212 1.3 15 t j = 25c 250 t j = 125c 500 t j = 25c 1.6 t j = 125c 5.5 t j = 25c 15 t j = 125c 27 thermal / package characteristics symbol r jc r ja v isolation torque min typ max 0.28 40 2500 10 unitc/w volts lb in characteristicjunction to case junction to ambient rms voltage (50-60 hz sinusoidal waveform from terminals to mounting base for 1 min.) maximum torque for device mounting screws and electrical terminations. 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 1.78mh, r g = 25 ? , peak i l = 53a 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - i d 53a di / dt 700a/s v r 100v t j 150 c apt reserves the right to change, without notice, the specifications and information contained herein. downloaded from: http:///
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 2, typical output characteristics figure 3, typical output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, typical transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 05 01 0 01 5 02 0 0 02468 02468 04 08 01 2 01 6 02 0 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 APT40M70JVFR i d = 0.5 i d [cont.] v gs = 10v 100 8060 40 20 0 1.81.6 1.4 1.2 1.0 0.8 1.151.10 1.05 1.00 0.95 0.90 1.21.1 1.0 0.9 0.8 0.7 0.6 100 8060 40 20 0 100 8060 40 20 0 6050 40 30 20 10 0 2.52.0 1.5 1.0 0.5 0.0 050-5893 rev a 2-2005 v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle 5v 4.5v 4v v gs =6v, 7v, 10v & 15v v gs =15v v gs =10v v gs =20v t j = +25c t j = -55c t j = +125c t j = +125c t j = +25c t j = -55c v gs =6v & 7v 5.5v 5v 4.5v 4v 5.5v v gs =10v normalized to v gs = 10v @ 0.5 i d [cont.] downloaded from: http:///
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, typical capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, typical source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 5 10 50 100 400 .01 .1 1 10 50 0 100 200 300 400 500 600 0 0.4 0.8 1.2 1.6 2.0 APT40M70JVFR t c =+25c t j =+150c single pulse 300100 5010 51 .5.1 2016 12 84 0 050-5893 rev a 2-2005 operation here limited by r ds (on) t j =+150c t j =+25c c rss c oss c iss 30,00010,000 5,0001,000 500100 200 100 5010 51 v ds =200v v ds =80v v ds =320v i d = i d [cont.] 10s1ms 10ms 100ms dc 100s "ul recognized" file no. e145592 apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. isotop ? is a registered trademark of sgs thomson. sot-227 (isotop ? ) package outline 31.5 (1.240)31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307)8.2 (.322) 30.1 (1.185)30.3 (1.193) 38.0 (1.496)38.2 (1.504) 14.9 (.587)15.1 (.594) 11.8 (.463)12.2 (.480) 8.9 (.350)9.6 (.378) hex nut m4 (4 places) 0.75 (.030)0.85 (.033) 12.6 (.496)12.8 (.504) 25.2 (0.992)25.4 (1.000) 1.95 (.077)2.14 (.084) * source drain gate * r = 4.0 (.157) (2 places) 4.0 (.157)4.2 (.165) (2 places) w=4.1 (.161)w=4.3 (.169) h=4.8 (.187)h=4.9 (.193) (4 places) 3.3 (.129)3.6 (.143) * source source terminals are shortedinternally. current handling capability is equal for either source terminal. downloaded from: http:///
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